Efficient Carrier Recombination in InGaN Pyramidal µ-LEDs Obtained through Selective Area Growth

Pyramid-shaped InGaN/GaN micro-light-emitting diodes (μ-LEDs) were grown on a sapphire substrate using the selective area growth technique. A stable emission wavelength of single μ-LED pyramid at 412 nm was observed under an injection current from 0.05 to 20 mA, despite non-uniformity thickness and composition multiple quantum wells (MQWs) sidewall. An efficient carrier confinement and, thus, high luminescence intensity demonstrated in middle sidewall through spatial-resolved cathodoluminescence (CL) characterization predicted by theoretical simulations. ultra-high output power density 1.37 kW/cm2 obtained pyramid, illustrating its great potential for application high-brightness micro-displays virtual reality augmented (VR AR) applications.